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25AA160D

16Kb 1.8V SPI Serial EEPROM with 32 Byte Page size

Status: In Production

Features:

  • 2048 x 8-bit (16 Kbit)
  • Supports SPI modes 0 and 3
  • Up to 10 MHz clock frequency
  • Self-Timed Erase and Write Cycles (5 ms max.)
  • Read current: 5 mA (Max) at 10 MHz
  • Write current: 5 mA (Max) at 10 MHz
  • Standby current: 5 μA (Max) at 5.5 V
  • Block Write Protection: Protect 1/4, 1/2 or Entire Array
  • More than 1 million erase/write cycles
  • Data retention > 200 years
  • Industrial (I): -40°C to 85°C
  • Extended (E): -40°C to 125°C
  • Automotive AECQ-100 Qualified1
  • Factory Programming Available
  • Available in standard packages including 8-lead PDIP and SOIC, and advanced packages including 8-lead MSOP, 8-lead TSSOP and 8-lead 2x3 TDFN
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

The Microchip 25AA160D is a 16 Kb Serial EEPROM utilizing the industry standard Serial Peripheral Interface (SPI) compatible serial bus. The device is organized as one block of 2048 x 8-bit and is optimized for use in consumer electronics, industrial, medical, and automotive applications where reliable and dependable nonvolatile memory storage is essential. Software write protection allows the user to protect ¼, ½, or the entire memory array. A hardware write protect pin is also provided, which additionally protects against inadvertent writes to the status register. The EEPROM is available in a variety of space-saving packaging options.

For product comparison, please consider: AT25160B, 25LC160D

Additional Features
      • 2048 x 8-bit (16 Kbit)
      • Serial Peripheral Interface (SPI) Compatible
        • Supports SPI modes 0 and 3
        • Up to 10 MHz clock frequency
      • Self-Timed Erase and Write Cycles (5 ms max.)
      • Low Power Consumption
        • Read current: 5 mA (Max) at 10 MHz
        • Write current: 5 mA (Max) at 10 MHz
        • Standby current: 5 μA (Max) at 5.5 V
      • Block Write Protection: Protect 1/4, 1/2 or Entire Array
      • More than 1 million erase/write cycles
      • Data retention > 200 years
      • Temperature Ranges Available
        • Industrial (I): -40°C to 85°C
        • Extended (E): -40°C to 125°C
      • Automotive AECQ-100 Qualified1
      • Factory Programming Available
      • Available in standard packages including 8-lead PDIP and SOIC, and advanced packages including 8-lead MSOP, 8-lead TSSOP and 8-lead 2x3 TDFN

      1Contact Microchip for automotive grade products

Parametrics
Name
Value
Density
16 Kbit
Op. Volt Range (V)
1.8 to 5.5
Max. Clock Freq.
10 MHz
Page Size (bytes)
32
Write Protect
Quarter, Half, Whole Array
Temp Range (°C)
-40°C to +125°C
Endurance
1,000,000
Bus Modes
SPI

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  • Socket: AC164301   PartNo: 25AA160D (8P)
  • Socket: AC164302   PartNo: 25AA160D (8SN)
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  • Socket: AC164325   PartNo: 25AA160D (8MS)
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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
25AA160D-I/S16K
0.000000
1000.000
0
DICE
Varies
-
-
25AA160D-I/W16K
0.000000
1000.000
0
WAFER
Varies
-
-
25AA160D-I/WF16K
0.000000
1000.000
0
WAFER
Varies
-
-
25AA160D-I/WM16KB21
0.000000
1000.000
0
Wafer
Varies
-
-
25AA160D-E/MS
0.025600
0.070000
8
MSOP
3x3mm
Matte Tin
e3
25AA160D-I/MS
0.025600
0.070000
8
MSOP
3x3mm
Matte Tin
e3
25AA160DT-E/MS
0.025600
0.215600
8
MSOP
3x3mm
Matte Tin
e3
25AA160DT-I/MS
0.025600
0.215600
8
MSOP
3x3mm
Matte Tin
e3
25AA160D-I/MNY
0.014300
0.466667
8
TDFN
2x3x0.8mm
NiPdAu
e4
25AA160DT-E/MNY
0.014300
0.248485
8
TDFN
2x3x0.8mm
NiPdAu
e4
25AA160DT-E/MNY-PR
0.014300
0.248485
8
TDFN
2x3x0.8mm
NiPdAu
e4
25AA160DT-I/MNY
0.014300
0.248485
8
TDFN
2x3x0.8mm
NiPdAu
e4
25AA160DT-I/MNY-PR
0.014300
0.248485
8
TDFN
2x3x0.8mm
NiPdAu
e4
25AA160D-E/ST
0.033000
0.090000
8
TSSOP
4.4mm
Matte Tin
e3
25AA160D-I/ST
0.033000
0.090000
8
TSSOP
4.4mm
Matte Tin
e3
25AA160DT-E/ST
0.033000
0.215600
8
TSSOP
4.4mm
Matte Tin
e3
25AA160DT-I/ST
0.033000
0.215600
8
TSSOP
4.4mm
Matte Tin
e3
25AA160D-I/SN
0.078000
0.250000
8
SOIC
.1China RoHs 50.pngIn(3.90mm)
Matte Tin
e3
25AA160DT-E/SN
0.078000
0.230303
8
SOIC
.1China RoHs 50.pngIn(3.90mm)
Matte Tin
e3
25AA160DT-I/SN
0.078000
0.230303
8
SOIC
.1China RoHs 50.pngIn(3.90mm)
Matte Tin
e3
25AA160D-E/SN
0.078000
0.250000
8
SOIC
.1China RoHs 50.pngIn(3.90mm)
Matte Tin
e3
25AA160DT-E/SN16KVAO
0.078000
0.230303
8
SOIC
.1China RoHs 50.pngIn(3.90mm)
Matte Tin
e3
25AA160D-E/SN16KVAO
0.078000
0.250000
8
SOIC
.1China RoHs 50.pngIn(3.90mm)
Matte Tin
e3
25AA160D-I/P
0.486700
0.900000
8
PDIP
.300in
Matte Tin
e3
25AA160D-E/P
0.486700
0.900000
8
PDIP
.300in
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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