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Bipolar Junction Transistors (BJTs)

High-Reliability and High-Current-Density BJTs, Tested in the Industry's Largest 19500 Burn-in Facility

When you are looking for a Bipolar Junction Transistor (BJT), you need the assurance that it has been well tested to operate reliably, especially in the harsh environments found in industrial, aerospace and defense applications. It can be difficult to find a supplier that has invested in the right equipment and processes to provide products that will meet your specific requirements.

Our BJTs undergo rigorous screening via our Enhanced Low Dose Rate Sensitivity (ELDRS) testing to ensure that they operate reliably in environments ranging from less than 100K Total Ionizing Dose (TID) up to 1M TID. They are manufactured and assembled in our facilities that are qualified and approved by the Defense Logistics Agency (DLA), and our facility in Lawrence, Massachusetts, has ELDRS testing capabilities. 

These devices deliver a higher transconductance than MOSFETs, which eliminates the need for separate gate drivers in your design. They also cover a wide range of voltage requirements and are available in an array of package options that are capable of handling high current densities.  

BJT Products

Field-Effect Transistors (FETs)

Field-effect transistors (FETs) are voltage-controlled devices with high input impedance, making them optimal for low-power circuits. 

Parametrics

Darlington Transistors/Arrays

A Darlington transistor consists of two BJTs connected to facilitate compounded current amplification. These transistors are packaged as an array of seven or eight Darlington pairs in an IC.

Parametrics

Single-Package NPN/PNP Combinations

Single-package combinations are offered as Size, Weight and Power (SWAP) solutions for designs with minimal board space and a small form factor.

Parametrics

NPN/PNP Complementary Transistors

Complementary transistors are NPN and PNP transistors with nearly identical characteristics.

Parametrics

NPN Transistors

NPN transistors are used to sink current.

 

Parametrics

PNP Transistors

PNP transistors are used to source current.

 

Parametrics

Military-Standard ELDRS BJTs

Our military-grade transistors have been manufactured to withstand varying levels of radiation exposure. They are part of the Joint Army Navy (JAN) designation system used to specify components procured for military applications. These designations ensure that electronic components used in critical military and aerospace applications can operate reliably in radiation-rich environments.

JAN Transistor Designations

  • JANSE/JANTXVE Transistors: Able to withstand up to 30 krad per unit of absorbed radiation dose
  • JANSK/JANTXVK Transistors: Able to withstand up to 50 krad per unit of absorbed radiation dose
  • JANSU/JANTXVU Transistors: Able to withstand up to 100 krad per unit of absorbed radiation dose
Video

JAN Transistors: Military-Standard Radiation Tolerance for Aerospace and Defense

Discover how our JAN transistors offer military-standard Enhanced Low Dose Radiation Sensitivity (ELDRS), ensuring unmatched reliability and performance in aerospace and defense applications. These transistors are specifically designed to withstand the harsh conditions of space and military environments, providing robust and dependable operation even under low-dose radiation exposure. By meeting stringent military standards, our JAN transistors deliver the reliability and durability required for critical missions and high-stakes operations in the aerospace and defense sectors.

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Applications

Rover

Aerospace

Our high-performing BJT products can be used in applications that require very high current densities, radiation tolerance and significant weight reduction for successful trips to the Moon, Mars and beyond.

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Helicopter

Defense

Our BJTs help address the need for secure, reliable electronics and systems that are used in defense applications, such as vehicles and weaponry. These systems have special requirements such as increased automation, portability, longer mission life and enhanced situational awareness.

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