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11AA02E48

2Kb UNI/O® Serial EEPROM with Pre-Programmed EUI-48™ MAC Address

Status: In Production

Features:

  • Pre-programmed Globally Unique, 48-bit Node Address
  • Compatible with EUI-48™ and EUI-64™
  • Single I/O, UNI/O® Serial Interface Bus
  • Low-Power CMOS Technology: -- 1 mA active current, typical -- 1 µA standby current (max.)
  • 256 x 8 Bit Organization
  • Schmitt Trigger Inputs for Noise Suppression
  • Output Slope Control to Eliminate Ground Bounce
  • 100 kbps Max. Bit Rate – Equivalent to 100 kHz Clock Frequency
  • Self-Timed Write Cycle (including Auto-Erase)
  • Page-Write Buffer for up to 16 Bytes
  • STATUS Register for Added Control: -- Write enable latch bit -- Write-In-Progress bit
  • Block Write Protection: -- Protect none, 1/4, 1/2 or all of array
  • Built-in Write Protection: -- Power-on/off data protection circuitry -- Write enable latch
  • High Reliability: -- Endurance: 1,000,000 erase/write cycles -- Data retention: > 200 years -- ESD protection: > 4,000V
  • 3-lead SOT-23 and 8-lead SOIC Packages
  • Available Temperature Ranges: -- Industrial (I): -40C to +85C
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Overview
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Development Environment
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Device Overview

Summary

The Microchip Technology Inc. 11AA02E48 device is a 2 Kbit Serial Electrically Erasable PROM. The device is organized in blocks of x8-bit memory and support the patented* single I/O UNI/O® serial bus. By using Manchester encoding techniques, the clock and data are combined into a single, serial bit stream (SCIO), where the clock signal is extracted by the receiver to correctly decode the timing and value of each bit. Low-voltage design permits operation down to 1.8V, with standby and active currents of only 1 uA and 1 mA, respectively. The 11AA02E48 is available in standard 8-lead SOIC and 3-lead SOT-23 packages.

Additional Features
  • Pre-programmed Globally Unique, 48-bit Node Address
  • Compatible with EUI-48™ and EUI-64™
  • Single I/O, UNI/O® Serial Interface Bus
  • Low-Power CMOS Technology:     -  1 mA active current, typical     -  1 µA standby current (max.)
  • 256 x 8 Bit Organization
  • Schmitt Trigger Inputs for Noise Suppression
  • Output Slope Control to Eliminate Ground Bounce
  • 100 kbps Max. Bit Rate – Equivalent to 100 kHz Clock Frequency
  • Self-Timed Write Cycle (including Auto-Erase)
  • Page-Write Buffer for up to 16 Bytes
  • STATUS Register for Added Control:     -  Write enable latch bit     -  Write-In-Progress bit
  • Block Write Protection:     -  Protect none, 1/4, 1/2 or all of array
  • Built-in Write Protection:     -  Power-on/off data protection circuitry     -  Write enable latch
  • High Reliability:     -  Endurance: 1,000,000 erase/write cycles     -  Data retention: > 200 years     -  ESD protection: > 4,000V
  • 3-lead SOT-23 and 8-lead SOIC Packages
  • Available Temperature Ranges:     -  Industrial (I): -40C to +85C
Parametrics
Name
Value
Density
2K bit (x8)
Op. Volt Range (V)
1.8 to 5.5
Max. Clock Freq.
100 kHz
Page Size (bytes)
16
Write Protect
Quarter Array
Temp Range (°C)
-40°C to +85°C
Endurance
1,000,000
Data Retention (Years)
200

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Dimension
Solder Composition
JEDEC Indicator
RoHS
China EFUP
11AA02E48-I/SN
0.078000
0.250000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
11AA02E48T-I/SN
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
11AA02E48T-I/TT
0.008300
0.039000
3
SOT-23
1.3mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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