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SST39WF400A

Status: Not Recommended for new designs

Features:

  • Organized as 256K x16
  •  Low Power Consumption: Active Current: 5 mA (typical), Standby Current: 1 µA (typical)
  • Sector-Erase Capability: Uniform 2 KWord sectors
  • Block-Erase Capability, Uniform 32 KWord blocks
  • Fast Erase and Word-Program: Sector-Erase Time: 36 ms (typical), Block-Erase Time: 36 ms (typical), Chip-Erase Time: 140 ms (typical), Word-Program Time: 28 µs (typical)
  • Packages Available – 48-ball TFBGA (6mm x 8mm) – 48-ball WFBGA (4mm x 6mm) – 48-bump XFLGA (4mm x 6mm) All non-Pb (lead-free) devices are RoHS compliant
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Device Overview

Summary

The SST39WF400A device is a 256K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary,high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39WF400A writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.

Please consider this device SST39WF400B

Additional Features
    • Organized as 256K x16
    •  Low Power Consumption: Active Current: 5 mA (typical), Standby Current: 1 µA (typical)
    • Sector-Erase Capability: Uniform 2 KWord sectors
    • Block-Erase Capability, Uniform 32 KWord blocks
    • Fast Erase and Word-Program: Sector-Erase Time: 36 ms (typical), Block-Erase Time: 36 ms (typical), Chip-Erase Time: 140 ms (typical), Word-Program Time: 28 µs (typical)
    • Packages Available – 48-ball TFBGA (6mm x 8mm) – 48-ball WFBGA (4mm x 6mm) – 48-bump XFLGA (4mm x 6mm) All non-Pb (lead-free) devices are RoHS compliant
Parametrics
Name
Value
Density
4 Mbit
Op. Volt Range (V)
1.65 to 1.95
Read Access Time
90 ns
Temp Range (°C)
-40°C to +85°C
Endurance
100,000 typ
Data Retention (Years)
100

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12/19/2017
3698KB

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