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SST26VF032

Status: Not Recommended for new designs

Features:

  • Serial Interface Architecture- Nibble-wide multiplexed I/O’s with SPI-like serial command structure: Mode 0 and Mode 3- Single-bit, SPI backwards compatible: Read, Fast Read, and JEDEC ID Readit/s sustained data rate
  • Continuous Linear Burst Modes– 8/16/32/64 Byte linear burst with wrap-around
  • Low Power Consumption:– Active Read current: 12 mA (typical @ 80 MHz)– Standby Current: 8 µA (typical)
  • Fast Erase and Byte-Program:– Chip-Erase time: 35 ms (typical)– Sector-/Block-Erase time: 18 ms (typical)
  • Page-Program– 256 Bytes per page– Fast Page Program time in 1 ms (typical)
  • Flexible Erase Capability– Uniform 4 KByte sectors– Four 8 KByte top and bottom parameter overlay blocks– Two 32 KByte top and bottom overlay blocks– Uniform 64 KByte overlay blocks - 62 Blocks
  • Software Write Protection– Individual Block-Locking- 64 KByte blocks, two 32 KByte blocks, and eight 8
  • Packages Available– 8-contact WSON (6mm x 5mm)– 8-lead SOIC (200 mil)
  • All devices are RoHS compliant
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

The SST26VF032 Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial flash devices. Operating at frequencies reaching 80 MHz, the SST26VF032 enables minimum latency execute-in-place (XIP) capability without the need for code shadowing on an SRAM. The device’s high performance and small footprint make it the ideal choice for mobile handsets, Bluetooth® headsets, optical disk drives, GPS applications and other portable electronic products. Further benefits are achieved with SST’s proprietary, high-performance CMOS SuperFlash® technology, which significantly improves performance and reliability, and lowers power consumption for high bandwidth, compact designs.

Please consider this device SST26VF032B

Additional Features
    • Serial Interface Architecture- Nibble-wide multiplexed I/O’s with SPI-like serial command structure: Mode 0 and Mode 3- Single-bit, SPI backwards compatible: Read, Fast Read, and JEDEC ID Readit/s sustained data rate
    • Continuous Linear Burst Modes– 8/16/32/64 Byte linear burst with wrap-around
    • Low Power Consumption:– Active Read current: 12 mA (typical @ 80 MHz)– Standby Current: 8 µA (typical)
    • Fast Erase and Byte-Program:– Chip-Erase time: 35 ms (typical)– Sector-/Block-Erase time: 18 ms (typical)
    • Page-Program– 256 Bytes per page– Fast Page Program time in 1 ms (typical)
    • Flexible Erase Capability– Uniform 4 KByte sectors– Four 8 KByte top and bottom parameter overlay blocks– Two 32 KByte top and bottom overlay blocks– Uniform 64 KByte overlay blocks - 62 Blocks
    • Software Write Protection– Individual Block-Locking- 64 KByte blocks, two 32 KByte blocks, and eight 8
    • Packages Available– 8-contact WSON (6mm x 5mm)– 8-lead SOIC (200 mil)
    • All devices are RoHS compliant
Parametrics
Name
Value
Density
32 Mbit
Op. Volt Range (V)
2.7 to 3.6
Max. Clock Freq.
80 MHz
Page Size (bytes)
256
Temp Range (°C)
-40°C to +85°C
Endurance
100,000
Data Retention (Years)
100
Bus Modes
SPI,SQI

Documents

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST26VF032-80-5I-VA
0.000000
1000.000
0
WAFER
Varies
-
-
SST26VF032-80-5I-S2AE
0.124400
0.266667
8
SOIJ
.208in
Matte Tin
e3
SST26VF032-80-5I-S2AE-T
0.124400
0.379048
8
SOIJ
.208in
Matte Tin
e3
SST26VF032-80-5I-QAE
0.073800
0.163265
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
SST26VF032-80-5I-QAE-T
0.073800
0.200000
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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