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The SST13LP02 is a high-efficiency, dual-band power
amplifier based on the highly-reliable InGaP/GaAs HBT
The SST13LP02 can be easily configured for high-power
applications with superb power-added efficiency while
operating over the 802.11a/b/g frequency band for U.S.,
European, and Japanese markets (2.4-2.5 GHz and 4.9-
The SST13LP02 has excellent linearity, typically ~4%
added EVM at 19 dBm output power, which is essential for
54 Mbps 802.11g operation while meeting 802.11g spectrum
mask at 22 dBm and 802.11b spectrum mask at 21.5
dBm. For 802.11a operation, the SST13LP02 has demonstrated
typically ~4% added EVM at 18 dBm output power
while meeting 802.11a spectrum mask at 22 dBm. The
SST13LP02 also has wide-range (>15 dB), temperaturestable
(~1.5 dB over 85°C), single-ended power detectors
which lower users’ cost on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control.
Ultra-low reference current (total IREF <2 mA) makes the
SST13LP02 controllable by an on/off switching signal
directly from the baseband chip. These features, coupled
with low operating current, make the SST13LP02 ideal
for the final stage power amplification in both batterypowered
802.11a/b/g WLAN transmitters and access
The SST13LP02 is offered in a 24-contact WQFN package.
See Figure 2 for pin assignments and Table 1 for pin
Development tools data is currently unavailable.
Rohs data is currently unavailable.
For pricing and availability, contact Microchip Local Sales.