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SST12LP14E

Status: End of Life

Features:

  • Excellent RF Stability with Moderate Gain: – Typically 23.5 dB gain across 2.4 – 2.5 GHz
  • High Linear Output Power: – >24 dBm P1dB – Meets 802.11g OFDM ACPR requirement up to 22 dBm – ~2.5% added EVM up to 18 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 22 dBm
  • High Power-added Efficiency/Low Operating Current for 802.11b/g/n Applications – ~33%/145 mA @ POUT = 22 dBm for 802.11g
  • High Temperature Stability – 2 dB gain variation between -40°C to +85°C – 1 dB power variation between 0°C to +85°C
  • Excellent On-chip Power Detection – <+/- 0.3dB variation between 0°C to +85°C – <+/- 0.4dB variation with 2:1 VSWR mismatch – <+/- 0.3dB variation Ch1 through Ch14 Applications:
  • WLAN (IEEE 802.11b/g/n)
  • Home RF
  • Cordless phones
  • 2.4 GHz ISM wireless
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

SST12LP14E is a high-efficiency, ultra-compact power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology. Designed to operate over the 2.4 - 2.5 GHz frequency band, SST12LP14E typically provides 23.5 dB gain with 32% power-added efficiency.This power amplifier has excellent linearity while meeting 802.11g spectrum mask requirements up to 22 dBm. The device typically consumes only 95 mA total current at 18 dBm output power, with linear 54 Mbps 802.11g modulation. This efficiency is desirable in embedded applications such as in hand-held units. The SST12LP14E also features easy, board-level usage along with high-speed power-up/-down control through a single combined reference voltage pin and is offered in an 8-contact XSON package.

Please consider this device SST12LP19E

Additional Features
  • Excellent RF Stability with Moderate Gain:– Typically 23.5 dB gain across 2.4 – 2.5 GHz
  • High Linear Output Power:– >24 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 22 dBm– ~2.5% added EVM up to 18 dBm for 54 Mbps 802.11g signal– Meets 802.11b ACPR requirement up to 22 dBm
  • High Power-added Efficiency/Low Operating Current for 802.11b/g/n Applications– ~33%/145 mA @ POUT = 22 dBm for 802.11g
  • High Temperature Stability– 2 dB gain variation between -40°C to +85°C– 1 dB power variation between 0°C to +85°C
  • Excellent On-chip Power Detection– <+/- 0.3dB variation between 0°C to +85°C– <+/- 0.4dB variation with 2:1 VSWR mismatch– <+/- 0.3dB variation Ch1 through Ch14Applications:
  • WLAN (IEEE 802.11b/g/n)
  • Home RF
  • Cordless phones
  • 2.4 GHz ISM wireless
Parametrics
Name
Value
Type
Power Ampllifier
Gain
23
Linear Power
19
Voltage min
3.0
Voltage max
4.2
Freq min
2.4
Freq max
2.4
Technology
InGaP/GaAs HBT
Application
802.11b/g/n

Documents

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST12LP14E-QX8E
0.010200
0.033000
8
XSON
2x2x0.45mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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