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M65609E

Status: In Production

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Device Overview

Summary

Very low power CMOS static RAM organized as 131,072 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a fast access time at 40ns. The high stability of the 6T cell protects against soft errors due to noise.This RAM is processed according to the methods of the latest revision of the MIL PRF 38535 and ESCC 9000. It is produced by the same process as the MH1RT sea of gates series.

Parametrics
Name
Value
Temp# Range (deg C)
-55 to 125
Operating Voltage Range (Vcc)
3 to 3.6

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