Status: End of Life
The LP1030D is a dual high voltage P-channel enhancement-mode (normally-off) lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener diode. This allows the device to be easily driven with a capacitively coupled gate drive circuit. The LP1030D utilizes an advanced lateral MOSFET structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
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