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LP1030D

EOL

Status: End of Life

Features:

  • 300V breakdown voltage
  • Integrated gate-to-source resistor
  • Integrated gate-to-source Zener diode
  • Low input capacitance
  • Fast switching speeds
  • Free from secondary breakdown
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

The LP1030D is a dual high voltage P-channel enhancement-mode (normally-off) lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener diode. This allows the device to be easily driven with a capacitively coupled gate drive circuit. The LP1030D utilizes an advanced lateral MOSFET structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Additional Features
  • 300V breakdown voltage
  • Integrated gate-to-source resistor
  • Integrated gate-to-source Zener diode
  • Low input capacitance
  • Fast switching speeds
  • Free from secondary breakdown

Documents

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
LP1030DK1-G
0.016000
0.049000
5
SOT-23
-
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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